By H. Adam
1965 Transactions of the 3rd foreign Vacuum Congress, quantity 2 provides the equipment for the epitaxial progress of silicon, which uses an ultra-thin layer of a silicon alloy at the substrate floor to improve epitaxial layers at temperature as little as 750°C. This booklet discusses the aptitude merits of the strategy and the mechanism of the epitaxial development technique.
Organized into 4 periods encompassing forty two chapters, this quantity begins with an summary of the precise impression of the skinny alloy layer. this article then describes the radical X-ray process and its software to semiconductor thin-film difficulties. different chapters contemplate the sphere of digital service delivery in semiconductor movies with specific connection with lively thin-film units and their general habit. the ultimate bankruptcy offers with the beta-ray single-scatter gauge, that are validated and defined in extremely simple operation.
This publication is a important source for physicists and scientists.
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Extra info for 1965 Transactions of the Third International Vacuum Congress. 28 Jun–2 July 1965, Stuttgart, Germany
Preparation methods included: (a) Slow evaporation and collection of a narrow range of the fractional distillate. Mobilities obtained are in the region of 10 cm 2 /V sec with carrier concentrations of about 1018 to 1020 c m - 3 8-10. (b) Evaporation of the total charge and collection of all the fractions, followed by annealing. Higher mobilities in the region of 500 cm 2 /V sec with carrier concentrations of about 10i7/cm3 are obtained 11 " 1 ^ (c) Flash evaporation of small grains continuously fed onto the source 14-16 .
CJuhasz andJC Anderson; Preparation of high mobility thin films of indium antimonide References i P K Weimer, Physics of Thin Films, Edited by G Hass and R T h u n n , (Academic Press). 2 P K Weimer, Proc IRE, 50,1462 (1962). 3 F V Shallcross, Proc IEEE, 51,851 (1963). 4 P K Weimer, Proc IEEE, 52,608 (1964). 5 W B Pennebaker, Aolid State Electronics, 8,509 (1965). 6 K F Hume and J B Mullin, Solid State Electronics, 5,211 (1962). 7 F H Eisen and C E Birchenall, Acta Met, 5,265 (1957). 8 I D Konozenko and S D Mikhnovsky, Izvest Akad Nauk SSSR, Ser Fiz, 20,1456 (1956).
13 J E Davey, R J Tiernan, T Pankey and M D Montgomery, Solid State Electronics, 6,205-216, May-June (1963). i 4 Y Sakai and K Takahashi, Japanese Journal of Applied Physics, 2, 10, 629-636, October (1963). 15 A Waxman, V E Henrich, F V Shallcross, H Borkan and P K Weimer, Electron mobility studies in surface space-charge layers in vapor-deposited CdS films, J Appi Phys, 36,1, January (1965). 16 H F Mataré, Anisotropy of carrier transport in semiconductor bicrystals, Proc Brussels Conference, Academic Press 1958, and Dislocation planes in semiconductors, J Appi Phys, 30, 4, 581-589, April (1959).
1965 Transactions of the Third International Vacuum Congress. 28 Jun–2 July 1965, Stuttgart, Germany by H. Adam