By Rohit Dhiman, Rajeevan Chandel
The ebook presents an in depth research of matters relating to sub-threshold interconnect functionality from the point of view of analytical strategy and layout suggestions. specific emphasis is laid at the functionality research of coupling noise and variability matters in sub-threshold area to enhance effective compact types. The proposed analytical technique provides actual perception of the parameters affecting the temporary habit of coupled interconnects. Remedial layout suggestions also are urged to mitigate the influence of coupling noise. the results of cord width, spacing among the wires, cord size are completely investigated. additionally, the impression of parameters like driving force energy on top coupling noise has additionally been analyzed. approach, voltage and temperature adaptations are favourite elements affecting sub-threshold layout and feature additionally been investigated. the method variability research has been conducted utilizing parametric research, procedure nook research and Monte Carlo approach. The booklet additionally presents a qualitative precis of the paintings said within the literature through quite a few researchers within the layout of electronic sub-threshold circuits. This e-book can be of curiosity for researchers and graduate scholars with deeper insights into sub-threshold interconnect types specifically. during this experience, this ebook will most sensible healthy as a textual content publication and/or a reference booklet for college kids who're initiated within the quarter of study and complicated classes in nanotechnology, interconnect layout and modeling.
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Extra resources for Compact Models and Performance Investigations for Subthreshold Interconnects
This increases the current driving capability of the buffer, and the load discharge is faster, leading to lower delays. 5 50 0 2 4 6 8 0 10 Wn (µm) Fig. 3. Li is varied from 600 to 1,000 μm . 05 % in 90-nm technology. 12 %, which is lowest among the three technology nodes. It is therefore encouraging to note that the proposed delay model is more accurate for short-channel devices. The reason is that the MOSFET model utilized is more appropriate for deep submicron technologies. As a result, the proposed model gives more accurate results in the lowest of the three technologies.
B Equivalent circuit of two capacitively coupled resistive–capacitive interconnections driven by CMOS buffers I II Vin1 and Vin2 switching from low-to-high. Thus, Vin1 (input to Inv1) and Vin2 (input to Inv2) are switching in the same direction or in-phase. Vin1 is switching from low-to-high, and Vin2 switches from high-to-low. Thus, Vin1 and Vin2 are switching out-of-phase. On this basis, expressions for the dynamic crosstalk have been developed and analyses of in-phase and out-of-phase switching presented.
19). In the ﬁrst term, delay is proportional to the input rise time and hence is waveform shape dependent. The other terms in the expression show the dependence of delay on power supply, device parameters, and load conditions. On the similar lines, ninety percent high-tolow propagation delay ðt0:1 Þ is given by t0:1 V C sr gn Uth Àg DD Uth n ¼ sr þ 0:9VDD À 1 À e RC þ Bn VDD ð3:20Þ Thus, we note that propagation delay of a submicrometer CMOS buffer driving an interconnect load is a function of various parameters.
Compact Models and Performance Investigations for Subthreshold Interconnects by Rohit Dhiman, Rajeevan Chandel